Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application
Source abstract
Abstract
For phase change memories application, Ge–Sb–Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC 2 H 5 ) 4, Sb(OC 2 H 5 ) 3, [(CH 3 ) 3 Si] 3 Sb, and [(CH 3 ) 3 Si] 2 Te were used to deposit various layers with compositions that can be described by combinations of GeTe 2 –Sb 2 Te layers including Ge 2 Sb 2 Te 5 at a substrate temperature as low as 70 °C. A shift in composition of Sb–Te films from Sb 2 Te 3 to Sb 2 Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH 3 ) 3 Si] 3 Sb and Te in the Sb 2 Te 3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Liquid Crystal Research Advancements
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea
Air Products Korea, 15 Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-920, Republic of Korea
Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, United States
Funding
National Research Foundation of Korea · Ministry of Science, ICT and Future Planning
References (24)
Show source-provided references
1. Lai, S.; Lowrey, T.International Electron Devices Meeting. Technical Digest., Dec. 2–5, 2001, IEDM ’01, Washington, DC, USA;IEEE:New York, 2001; pp36.5.1–36.5.4.
2. Burr G. W. · IBM J. Res. Dev. · 2008 · 52 · 44910.1147/rd.524.0449 ↗
3. Hudgens S. · MRS Bull. · 2004 · 29 · 82910.1557/mrs2004.236 ↗
4. Wong H. S. P. · Proc. IEEE · 2010 · 98 · 220110.1109/JPROC.2010.2070050 ↗
5. Lai, S.International Electron Devices Meeting. Technical Digest, Dec. 8–10, 2003, IEDM ’03, Washington, DC, USA;IEEE:New York, 2003; pp10.1.1–10.1.4.
6. Pirovano, A.; Lacaita, A. L.; Benvenuti, A.; Pellizzer, F.; Hudgens, S.; Bez, R.Internation Electron Devices Meeting. Technical DigestDec. 8–10, 2003, IEDM ’03, Washington, DC, USA;IEEE:New York, 2003; pp29.6.1–29.6.4.
7. Ahn, S. J.; Hwang, Y. N.; Song, Y. J.; Lee, S. H.; Lee, S. Y.; Park, J. H.; Jeong, C. W.; Ryoo, K. C.; Shin, J. M.; Fai, Y.; Oh, J. H.; Koh, G. H.; Jeong, G. T.; Joo, S. H.; Choi, S. H.; Son, Y. H.; Shin, J. C.; Kim, Y. T.; Jeong, H. S.; Kinam, K.VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on, Jun. 14–16, 2005; Kyoto, Japan;IEEE:New York, 2005; pp98–99.
8. Pellizzer, F.; Pirovano, A.; Ottogalli, F.; Magistretti, M.; Scaravaggi, M.; Zuliani, P.; Tosi, M.; Benvenuti, A.; Besana, P.; Cadeo, S.; Marangon, T.; Morandi, R.; Piva, R.; Spandre, A.; Zonca, R.; Modelli, A.; Varesi, E.; Lowrey, T.; Lacaita, A.; Casagrande, G.; Cappelletti, P.; Bez, R.VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on, Jun. 15–17, 2004, Honolulu, HI, USA;IEEE:New York, 2004; pp18–19.
9. Kim Y.-T. · Jpn. J. Appl. Phys. · 2005 · 44 · 270110.1143/JJAP.44.2701 ↗
10. Yamada N. · Jpn. J. Appl. Phys. · 1987 · 26 · 6110.7567/JJAPS.26S4.61 ↗
11. Choi B. J. · J. Electrochem. Soc. · 2007 · 154 · H31810.1149/1.2456199 ↗
12. Choi B. J. · Chem. Mater. · 2007 · 19 · 438710.1021/cm071313x ↗
13. Choi B. J. · Chem. Mater. · 2009 · 21 · 238610.1021/cm803369b ↗
14. Pore V. · J. Am. Chem. Soc. · 2009 · 131 · 347810.1021/ja8090388 ↗
15. Knapas K. · Chem. Mater. · 2009 · 22 · 138610.1021/cm902180d ↗
16. Ritala M. · Microelectron. Eng. · 2009 · 86 · 194610.1016/j.mee.2009.03.014 ↗
17. Pore V. · Chem. Mater. · 2010 · 23 · 24710.1021/cm102904f ↗
18. Sarnet T. · J. Electrochem. Soc. · 2011 · 158 · D69410.1149/2.045112jes ↗
19. Eom T. · Chem. Mater. · 2012 · 24 · 209910.1021/cm300539a ↗
20. Eom T. · Chem. Mater. · 2014 · 26 · 158310.1021/cm4034885 ↗
21. Eom T. · J. Mater. Chem. C · 2015 · 3 · 136510.1039/C4TC02688H ↗
22. Nagase S. · J. Chem. Soc., Chem. Commun. · 1990 · 23 · 172410.1039/C39900001724 ↗
23. Breunig H. J. · Coord. Chem. Rev. · 1997 · 163 · 3310.1016/S0010-8545(97)00008-8 ↗
24. Njoroge W. K. · J. Vac. Sci. Technol., A · 2002 · 20 · 23010.1116/1.1430249 ↗