Single-Precursor Intermediate Shelling Enables Bright, Narrow Line Width InAs/InZnP-Based QD Emitters

Bright, narrow spectrum infrared emitters, particularly Cd- and Pb-free materials, are of interest for bioimaging, photodetection, and telecommunications. InAs-based quantum dots (QDs) are promising emitters in this spectral range; however, efforts to increase the photoluminescence quantum yield (PLQY) tend to broaden the PL line width as a consequence of interfacial defect formation when thick shells, lattice-mismatched with the core, are employed. Here we report that developing a single-precursor complex for InZnP growth enables uniform shell growth that maintains the excellent size dispersion (6%) of the cores. The introduction of this intermediate layer is key to facilitate the subsequent growth of different shells to improve radiative recombination without sacrificing size uniformity. The growth of InAs/InZnP/ZnSe leads to a PL full-width at half-maximum (fwhm) of 100 meV at 1.12 eV with a PLQY of 14%. We then further introduce an additional GaP layer to increase the radiative/nonradiative relative rate. InAs/InZnP/GaP/ZnSe QDs reach a PLQY of 23% while maintaining a narrow fwhm.