MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as Precursor
Source abstract
Abstract
A new synthetic route for the deposition of CoAl 2 O 4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(O i C 3 H 7 ) 4 ] 2 } is presented. Molecular properties of {Co[Al(O i C 3 H 7 ) 4 ] 2 } have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV−vis, and SIMS measurements.
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Research context
OpenAlex topics: Pigment Synthesis and Properties · Advanced Photocatalysis Techniques · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Istituto di Chimica Inorganica e delle Superfici (ICIS)−CNR, Corso Stati Uniti 4, 35127 Padova, Italy, Dipartimento di Fisica, Università degli Studi di Padova, Via Marzolo 8, 35131 Padova, Italy, Dipartimento di Scienze Chimiche, Università degli Studi di Padova, Via Loredan 4, 35131 Padova, Italy, and Dipartimento di Chimica, Università Ca' Foscari di Venezia, Dorsoduro 2137, 30123 Venezia, Italy
References (34)
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34. The XRD peak at 2θ = 48.9° can be ascribed to the (331) reflection of the CoAl2O4spinel structure (JCPDS 44-0160).3,10,12