Single-Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1–xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition
Source abstract
Abstract
The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
School of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
References (44)
Show source-provided references
1. 10.1016/0254-0584(91)90158-Q10.1016/0254-0584(91)90158-Q ↗
2. 10.1021/nn502776h10.1021/nn502776h ↗
3. 10.1021/acs.nanolett.5b0108010.1021/acs.nanolett.5b01080 ↗
4. 10.1021/nn500914810.1021/nn5009148 ↗
5. 10.1021/ja050469010.1021/ja0504690 ↗
6. 10.1021/acs.chemmater.6b0043010.1021/acs.chemmater.6b00430 ↗
7. 10.1021/ar500277z10.1021/ar500277z ↗
8. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
9. 10.1039/C4CS00287C10.1039/C4CS00287C ↗
10. 10.1021/jz301673x10.1021/jz301673x ↗
11. 10.1063/1.479912610.1063/1.4799126 ↗
12. 10.1039/C4RA08513B10.1039/C4RA08513B ↗
13. 10.1039/C6TC00489J10.1039/C6TC00489J ↗
14. 10.1016/j.jallcom.2010.07.12010.1016/j.jallcom.2010.07.120 ↗
15. 10.1063/1.480500310.1063/1.4805003 ↗
16. 10.1007/BF0051759310.1007/BF00517593 ↗
17. 10.1039/C3NR05630A10.1039/C3NR05630A ↗
18. 10.1103/PhysRevB.87.19520110.1103/PhysRevB.87.195201 ↗
19. 10.1021/acs.nanolett.5b0231510.1021/acs.nanolett.5b02315 ↗
20. 10.1039/c3dt50607j10.1039/c3dt50607j ↗
21. 10.1002/cvde.20050420310.1002/cvde.200504203 ↗
22. 10.1016/j.jcrysgro.2014.07.01910.1016/j.jcrysgro.2014.07.019 ↗
23. 10.1039/C4QI00059E10.1039/C4QI00059E ↗
24. 10.1039/c0sc00538j10.1039/c0sc00538j ↗
25. 10.1039/C4NJ01201A10.1039/C4NJ01201A ↗
26. 10.1039/C4NJ01461H10.1039/C4NJ01461H ↗
27. 10.1021/cm504532w10.1021/cm504532w ↗
28. 10.1021/acsami.5b0605510.1021/acsami.5b06055 ↗
29. 10.1039/c4cc02592j10.1039/c4cc02592j ↗
30. 10.1039/C4NR04228J10.1039/C4NR04228J ↗
31. 10.1021/cr900406f10.1021/cr900406f ↗
32. 10.1021/acsami.6b0369110.1021/acsami.6b03691 ↗
33. 10.1039/C5NR01205H10.1039/C5NR01205H ↗
34. 10.1246/bcsj.61.226510.1246/bcsj.61.2265 ↗
35. 10.1016/S0277-5387(00)83293-310.1016/S0277-5387(00)83293-3 ↗
36. 10.1016/S0277-5387(00)84707-510.1016/S0277-5387(00)84707-5 ↗
37. 10.1071/CH989083710.1071/CH9890837 ↗
38. Stiefel, E. I.; Pan, W. H.; Halbert, T. R.Sulfido(disulfido)bis(N,N-substituted dithiocarbamato)W(VI) Complexes. U.S. Patent US4585882A, 1986.
39. 10.1016/j.apsusc.2015.06.17810.1016/j.apsusc.2015.06.178 ↗
40. 10.1021/cm702667410.1021/cm7026674 ↗
41. 10.1039/a905095g10.1039/a905095g ↗
42. 10.1016/0043-1648(84)90017-610.1016/0043-1648(84)90017-6 ↗
43. 10.1002/cvde.20140713510.1002/cvde.201407135 ↗
44. 10.1021/j100393a01010.1021/j100393a010 ↗