DataVXChemistry of MaterialsPaper
journal article·2020-04-28

Defect Engineering for Realizing p-Type AgBiSe2 with a Promising Thermoelectric Performance

Shan Li, Zhenzhen Feng, Zhongjia Tang, Fanghao Zhang, Feng Cao, Xingjun Liu, David J. Singh, Jun Mao, Zhifeng Ren, Qian Zhang

Chemistry of Materials· Volume 32· Issue 8
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Source abstract

Abstract

Realization of ambipolar doping (n- and p-type) in thermoelectric materials is highly critical for module design. However, many thermoelectric materials can only be doped into one type, due to the Fermi-level pinning by intrinsic defects, or have poor performance for one doping type. AgBiSe2 is a typical case that shows persistent n-type doping while p-type AgBiSe2 has been predicted to exhibit higher thermoelectric performance but has not been reliably obtained nor has the performance been demonstrated. Here, we demonstrate the successful experimental synthesis of p-type AgBiSe2 by suppressing Se vacancies via adding an excess amount of Se. In addition, we show that Pb doping at the Bi site can effectively increase the hole concentration and optimize the power factor of p-type AgBiSe2. This leads to promising thermoelectric performance close to room temperature. Our work demonstrates the importance of defect engineering for overcoming the doping bottleneck, thus promoting the discovery of new thermoelectric materials.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, Guangdong 518055, P.R. China

Department of Physics and Texas Center for Superconductivity at University of Houston (TcSUH), University of Houston, Houston, Texas 77204, United States

Department of Physics and Astronomy and Department of Chemistry, University of Missouri, Columbia, Missouri 65211, United States

Department of Chemistry, University of Houston, Houston, Texas 77204, United States

School of Science, Harbin Institute of Technology, Shenzhen, Guangdong 518055, P.R. China

State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, Heilongjiang 150001, P.R. China

Funding

National Natural Science Foundation of China · Shenzhen Science and Technology Innovation Plan

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