Optical Properties and Electronic Structure of Spinel ZnRh2O4
Source abstract
Abstract
The electronic structure of normal spinel structure ZnRh 2 O 4 is investigated using combined optical properties measurements and density functional calculations. We find semiconducting behavior with an indirect band gap between crystal field split Rh 4d levels, with a t 2g valence band and an e g conduction band. The band gap is found to be ∼1.2 eV based on a comparison of the calculated and measured optical conductivities. The results are discussed in terms of potential photoelectrochemical applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Condensed Matter Physics · Perovskite Materials and Applications · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science and Technology Division, Oak Ridge, Tennessee 37831, Departments of Chemistry and Physics, University of Tennessee, Knoxville, Tennessee 37996, Physics Department, Indian Institute of Technology, Roorkee, Uttaranchal 247667, India, and Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003
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