Mechanistic Studies of Chain Termination and Monomer Absorption in Molecular Layer Deposition
Source abstract
Abstract
Molecular layer deposition (MLD) is of growing interest as a vapor-phase method for depositing ultrathin polymeric films. The amount of material deposited per cycle of MLD is believed to be strongly dependent on the number of available surface reaction sites. However, the factors that alter the number of reactive sites during cycling have not been well understood. In this work, we provide concrete evidence that although chain termination reactions may reduce the number of reaction sites, the adsorption or absorption of monomers allows for the introduction of new reaction sites. These absorbed monomers are strongly bound to the film and allow the films to recover from growth defects introduced by chain terminations. A mathematical model for growth is developed and suggests that these absorptions eventually lead to the characteristic steady-state growth rate seen for MLD processes. Fits of the model to the experimental data for polyurea MLD indicate that ∼3% of the chains experience termination events during each cycle at steady state, with any given chain having an ≈50% chance to be terminated before reaching 22 cycles; this termination is then compensated for by uptake of new monomers. Together, these results indicate that typical MLD growth involves the continuous occurrence of termination reactions and the renucleation of chains within the film via the absorption of monomers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Molecular Junctions and Nanostructures · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
Show source-provided references
1. 10.1149/06409.0087ecst10.1149/06409.0087ecst ↗
2. 10.1021/am400288710.1021/am4002887 ↗
3. 10.1021/am101080510.1021/am1010805 ↗
4. 10.1116/1.480460910.1116/1.4804609 ↗
5. 10.1021/am504441e10.1021/am504441e ↗
6. 10.1116/1.498004910.1116/1.4980049 ↗
7. 10.1007/s10853-017-0855-610.1007/s10853-017-0855-6 ↗
8. 10.1021/am404918g10.1021/am404918g ↗
9. 10.1063/1.10668110.1063/1.106681 ↗
10. Yoshimura T. · 2009 · 15
11. 10.1116/1.362064410.1116/1.3620644 ↗
12. 10.1116/1.479347810.1116/1.4793478 ↗
13. 10.1021/cm500825b10.1021/cm500825b ↗
14. 10.1021/am508441810.1021/am5084418 ↗
15. 10.1039/C7TA04449F10.1039/C7TA04449F ↗
16. 10.3762/bjnano.5.12310.3762/bjnano.5.123 ↗
17. 10.1063/1.10541510.1063/1.105415 ↗
18. 10.1143/JJAP.41.74610.1143/JJAP.41.746 ↗
19. 10.1049/mnl.2010.012810.1049/mnl.2010.0128 ↗
20. 10.1088/0957-4484/22/33/33530210.1088/0957-4484/22/33/335302 ↗
21. 10.1021/ja042751x10.1021/ja042751x ↗
22. 10.1021/nn901013r10.1021/nn901013r ↗
23. 10.1021/ma400998m10.1021/ma400998m ↗
24. 10.1021/acsami.6b0214210.1021/acsami.6b02142 ↗
25. 10.1021/acs.chemmater.6b0453010.1021/acs.chemmater.6b04530 ↗
26. 10.1021/cm101623910.1021/cm1016239 ↗
27. 10.1126/science.108644110.1126/science.1086441 ↗
28. 10.1016/S0032-3861(96)00504-610.1016/S0032-3861(96)00504-6 ↗
29. 10.1021/jp067041n10.1021/jp067041n ↗
30. 10.1021/la702527910.1021/la7025279 ↗
31. 10.1021/la301793610.1021/la3017936 ↗
32. 10.1116/1.366284610.1116/1.3662846 ↗
33. 10.1021/acs.chemmater.7b0178010.1021/acs.chemmater.7b01780 ↗
34. 10.1016/S0079-6816(00)00024-110.1016/S0079-6816(00)00024-1 ↗
35. 10.1021/cm300162v10.1021/cm300162v ↗
36. 10.1021/nl403244s10.1021/nl403244s ↗
37. Stevens M. P. · 1999
38. Sandoval T. E. · 2017
39. 10.1021/jp054340o10.1021/jp054340o ↗
40. 10.1021/acs.jpclett.5b0009810.1021/acs.jpclett.5b00098 ↗
41. 10.1021/jp302930g10.1021/jp302930g ↗
42. 10.1063/1.475790710.1063/1.4757907 ↗
43. 10.1021/am400310p10.1021/am400310p ↗
44. 10.1021/la102649x10.1021/la102649x ↗
45. 10.1021/la202391h10.1021/la202391h ↗
46. 10.1016/j.micromeso.2012.09.03510.1016/j.micromeso.2012.09.035 ↗
47. 10.1039/C7MH00196G10.1039/C7MH00196G ↗
48. 10.1116/1.497241810.1116/1.4972418 ↗
49. 10.1021/cm402909810.1021/cm4029098 ↗