Growth and characterization of In[sub x]Ga[sub 1−x]N alloys by metalorganic chemical vapor deposition for solar cell applications
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Nanowire Synthesis and Applications
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References (2)
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1. Huang, Y. et al., “Compositional instability in InGaN epitaxial layers induced by kinetic effects,” J. Appl. Phys. 110(6), 064908 2011.http://dx.doi.org/10.1063/1.362643410.1063/1.3626434 ↗
2. Shiojiri · J. Appl. Phys. · 2006 · 99 · 07350510.1063/1.2180532 ↗