journal article·2018-04-10

Synthesis and Electrochemical Properties of I4̅-Type Li1+2xZn1–xPS4 Solid Electrolyte

Naoki Suzuki, William D. Richards, Yan Wang, Lincoln J. Miara, Jae Chul Kim, In-Sun Jung, Tomoyuki Tsujimura, Gerbrand Ceder

Chemistry of Materials· Volume 30· Issue 7
Publisher page

Abstract

I4̅-type LiZnPS4 solid electrolyte was synthesized starting from Li2S, P2S5, and ZnS, and its room temperature ionic conductivity, σ25°C, was ∼10–8 S/cm. To improve σ25°C, compositions of Li1+2xZn1–xPS4 (x = 0.125, 0.25, 0.375, 0.5, 0.625, 0.75, 0.8, 0.9) were synthesized from mixtures of LiZnPS4 and amorphous Li3PS4 (a-LPS). The samples with x ≤ 0.8 were confirmed by means of XRD and Raman spectroscopy to have the I4̅ structure. The maximum σ25°C was 5.7 × 10–4 S/cm at x = 0.625. NMR measurement revealed that Li1+2xZn1–xPS4 (x ≤ 0.625) is almost a single phase material and not a simple mixture of LiZnPS4 and a-LPS, confirming that its crystal structure is responsible for the improved ionic conductivity. Li2.25Zn0.375PS4 (x = 0.625) was reactive to graphite and indium anodes but stable against a Li4Ti5O12 anode and a 4 V class cathode. We fabricated an all-solid-state battery in the form of graphite|a-LPS|Li2.25Zn0.375PS4|Li2O-ZrO2 coated Li(Ni, Mn, Co)O2 and examined its performance. It showed a first-cycle discharge capacity of ∼144 mAh/g–NMC with a capacity retention of 83% after 100 cycles.
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OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Advanced Battery Technologies Research

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Affiliations

Samsung R&D Institute Japan, Minoh Semba Center Building, Semba Nishi 2-1-11, Minoh, Osaka 562-0036, Japan

Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States

Advanced Materials Lab, Samsung Research America, 3 Van de Graaff Drive, Burlington, Massachusetts 01803, United States

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea

Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States

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