journal article·2009-07-14

Atomic Layer Deposition of Antimony Oxide and Antimony Sulfide

Ren Bin Yang, Julien Bachmann, Manfred Reiche, Jürgen W. Gerlach, Ulrich Gösele, Kornelius Nielsch

Chemistry of Materials· Volume 21· Issue 13
Publisher page

Abstract

Antimony oxide and sulfide are obtained in atomic layer deposition (ALD) mode by reaction of tris(dimethylamido)-antimony with ozone or hydrogen sulfide at mild temperatures and with large growth rates. Thin films deposited with those methods are chemically pure and stoichiometric. Nanostructures of large aspect ratios are also accessible.
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Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max Planck Institute of Microstructure Physics, Am Weinberg 2, D-06120 Halle, Germany

Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany

Leibniz-Institute of Surface Modification, Permoserstrasse 15, D-04318 Leipzig, Germany

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