Systematic Study of the Multiple-Element Filling in Caged Skutterudite CoSb3
Source abstract
Abstract
Impurity filling fraction limits (FFLs) in nearly 20 dual-element-filled CoSb 3 are investigated via ab initio density functional calculations. The two types of filling impurities are selected from rare-earths (La, Ce, Eu, Yb), alkaline-earths (Ba, Sr), and alkaline metals (Na, K) with different chemical nature. Our results show that alkaline-earth and alkaline metal atoms can be jointly filled into the crystal voids, and the total filling fraction limits follow a linear correlation rule, that is, the filling fraction of one element decreases linearly whereas the other element’s increases. Cofilling of alkaline-earth (or alkaline metal) with rare-earth shows one filler dominant, usually alkaline-earth (or alkaline metal), or the one with relatively high filling fraction limit. Rare-earth impurities as cofilling atoms have relatively lower filling fractions than alkaline-earth (or alkaline metal) atoms. Eu has a relatively high FFL comparable to the FFLs of alkaline-earths, and the total FFL for the Na−Eu cofilled CoSb 3 may be higher than that of the Na-single-filled CoSb 3 (65%, the highest FFL). A model to estimate the FFLs for the filling with more than two types of elements in filled skutterudites is also discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Rare-earth and actinide compounds · Intermetallics and Advanced Alloy Properties · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Graduate School, Chinese Academy of Sciences, Beijing, China
Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802
References (50)
Show source-provided references
1. Uher, C.InRecent Trends in Thermoelectric Materials Research I, Semiconductors and Semimetals;Tritt, T. M., Ed.Academic:San Diego, 2000; Vol.69, pp139−253and references therein.
2. Sales B. C. · Science · 1996 · 272 · 132510.1126/science.272.5266.1325 ↗
3. Slack, G. A.InThermoelectric Handbook;Powe, D. M., Ed.CRC:Boca Raton, FL, 1995; p407.
4. Slack G. A. · J. Appl. Phys. · 1994 · 76 · 166510.1063/1.357750 ↗
5. Nolas G. S. · Phys. Rev. B · 1998 · 58 · 16410.1103/PhysRevB.58.164 ↗
6. Morelli D. T. · Phys. Rev. B · 1997 · 56 · 737610.1103/PhysRevB.56.7376 ↗
7. Kuznetsov V. L. · J. Phys: Condens. Matter · 2003 · 15 · 5035
8. Lamberton G. A. · Appl. Phys. Lett. · 2002 · 80 · 59810.1063/1.1433911 ↗
9. Grytsiv A. · Phys. Rev. B · 2002 · 66 · 09441110.1103/PhysRevB.66.094411 ↗
10. Pei Y. Z. · Solid State Sci. · 2008 · 10 · 142210.1016/j.solidstatesciences.2008.01.016 ↗
11. Nolas G. S. · Appl. Phys. Lett. · 2000 · 77 · 185510.1063/1.1311597 ↗
12. Zhao X. Y. · Appl. Phys. Lett. · 2006 · 89 · 09212110.1063/1.2345249 ↗
13. Chen L. D. · J. Appl. Phys. · 2001 · 90 · 186410.1063/1.1388162 ↗
14. Zhao X. Y. · J. Appl. Phys. · 2006 · 99 · 05371110.1063/1.2172705 ↗
15. Puyet M. · J. Appl. Phys. · 2004 · 95 · 485210.1063/1.1688463 ↗
16. Puyet M. · J. Appl. Phys. · 2005 · 97 · 08371210.1063/1.1868083 ↗
17. He T. · Chem. Mater. · 2006 · 18 · 75910.1021/cm052055b ↗
18. Sales B. C. · Phys. Rev. B · 2000 · 61 · 247510.1103/PhysRevB.61.2475 ↗
19. Nolas G. S. · Appl. Phys. Lett. · 2004 · 84 · 521010.1063/1.1765205 ↗
20. Nolas G. S. · Appl. Phys. Lett. · 2000 · 77 · 5210.1063/1.126874 ↗
21. Pei Y. Z. · Appl. Phys. Lett. · 2006 · 89 · 22110710.1063/1.2397538 ↗
22. Pei Y. Z. · Appl. Phys. Lett. · 2009 · 95 · 04210110.1063/1.3182800 ↗
23. Sales B. C. · Phys. Rev. B · 1997 · 56 · 1508110.1103/PhysRevB.56.15081 ↗
24. Nolas G. S. · J. Appl. Phys. · 1996 · 79 · 841210.1063/1.362515 ↗
25. Meisner G. P. · Phys. Rev. Lett. · 1998 · 80 · 355110.1103/PhysRevLett.80.3551 ↗
26. Feldman J. L. · Phys. Rev. B · 1995 · 53 · 627310.1103/PhysRevB.53.6273 ↗
27. Singh D. J. · Phys, Rev. B · 1994 · 50 · 1123510.1103/PhysRevB.50.11235 ↗
28. Singh D. J. · Phys. Rev. B · 1997 · 56 · R165010.1103/PhysRevB.56.R1650 ↗
29. Lo̷vvik O. M. · Phys. Rev. B · 2004 · 70 · 19511910.1103/PhysRevB.70.195119 ↗
30. Bertin L. · J. Chem. Phys. · 2004 · 121 · 898310.1063/1.1802631 ↗
31. Yang J. · Adv. Funct. Mater. · 2008 · 18 · 288010.1002/adfm.200701369 ↗
32. Yang J. · J. Electron. Mater. · 2009 · 38 · 139710.1007/s11664-009-0703-9 ↗
33. Mei Z. G. · Phys. Rev. B · 2006 · 74 · 15320210.1103/PhysRevB.74.153202 ↗
34. Shi X. · Phys. Rev. Lett. · 2005 · 95 · 18550310.1103/PhysRevLett.95.185503 ↗
35. Zhang W. · Appl. Phys. Lett. · 2006 · 89 · 11210510.1063/1.2348760 ↗
36. Mei Z. G. · Phys. Rev. B · 2008 · 77 · 04520210.1103/PhysRevB.77.045202 ↗
37. Nolas G. S. · J. Appl. Phys. · 1996 · 79 · 400210.1063/1.361828 ↗
38. Tang X. F. · J. Appl. Phys. · 2006 · 100 · 12370210.1063/1.2375017 ↗
39. Yang J. · Appl. Phys. Lett. · 2007 · 90 · 19211110.1063/1.2737422 ↗
40. Shi X. · Appl. Phys. Lett. · 2008 · 92 · 18210110.1063/1.2920210 ↗
41. Zhao W. Y. · J. Am. Chem. Soc. · 2009 · 131 · 371310.1021/ja8089334 ↗
42. Xi L. · J. Am. Chem. Soc. · 2009 · 131 · 556010.1021/ja8093845 ↗
43. Blöchl P. E. · Phys. Rev. B · 1994 · 50 · 1795310.1103/PhysRevB.50.17953 ↗
44. Kresse G. · Phys. Rev. B · 1999 · 59 · 175810.1103/PhysRevB.59.1758 ↗
45. Perdew J. P. · Phys. Rev. Lett. · 1996 · 77 · 386510.1103/PhysRevLett.77.3865 ↗
46. Kresse G. · Phys. Rev. B · 1996 · 54 · 1116910.1103/PhysRevB.54.11169 ↗
47. Kresse G. · Phys. Rev. B · 1993 · 47 · 55810.1103/PhysRevB.47.558 ↗
48. Monkhorst H. J. · Phys. Rev. B. · 1976 · 13 · 518810.1103/PhysRevB.13.5188 ↗
49. Shannon R. D. · Acta Crystallogr., Sect. A · 1976 · 32 · 75110.1107/S0567739476001551 ↗
50. Bai S. Q. · Acta. Mater. · 2009 · 57 · 313510.1016/j.actamat.2009.03.018 ↗