journal article·2011-01-01Open access

Cu2ZnSnS4 polycrystalline thin films with large densely packed grains prepared by sol-gel method

Minlin Jiang

Journal of Photonics for Energy· Volume 1· Issue 1

Abstract

Cu2ZnSnS4 (CZTS) was obtained from a sol-gel precursor which consists of copper chloride, zinc chloride, tin chloride, and thiourea. CZTS thin films were prepared by spin-coating the sol-gel precursor followed by annealing in a nitrogen atmosphere. The morphology, composition, and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, and Raman scattering. The optical measurement shows the bandgap of these films is ∼1.51 eV, and the optical absorption coefficient is on the order of 104 cm−1. CZTS solar cells with a structure of low-alkali glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid were tentatively fabricated. The best solar cell showed a short-circuit current density of 5.06 mA/cm2, an open-circuit voltage of 358 mV, a fill factor of 34.66%, and an efficiency of 0.63% under AM1.5 (100 mW/cm2) illumination. These results demonstrate the CZTS thin films were successfully deposited by a cheap sol-gel technique.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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References (34)

Show source-provided references
1. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla , “New world record efficiency for Cu(In,Ga)Se2thin-film solar cells beyond 20%,” Prog. Photovoltaics (2011).10.1002/pip.1078
2. SOLAR FRONTIER (2011, April 20). Solar Frontier Officially Opens World's Largest CIS Solar Module Plant, http://www.solar-frontier.com/MainMenu/News/19.
3. 10.1002/pip.105710.1002/pip.1057 ↗
4. 10.1016/j.jpcs.2005.10.11210.1016/j.jpcs.2005.10.112 ↗
5. 10.1002/pip.46210.1002/pip.462 ↗
6. 10.1016/j.tsf.2008.11.00210.1016/j.tsf.2008.11.002 ↗
7. 10.1016/j.tsf.2004.11.02410.1016/j.tsf.2004.11.024 ↗
8. 10.1016/j.solmat.2010.04.06010.1016/j.solmat.2010.04.060 ↗
9. 10.1002/pip.97610.1002/pip.976 ↗
10. 10.1016/S0927-0248(00)00088-X10.1016/S0927-0248(00)00088-X ↗
11. 10.1002/pssa.20092519410.1002/pssa.200925194 ↗
12. 10.1016/j.solmat.2008.12.00910.1016/j.solmat.2008.12.009 ↗
13. 10.1016/j.jelechem.2010.01.00810.1016/j.jelechem.2010.01.008 ↗
14. 10.1143/JJAP.44.71510.1143/JJAP.44.715 ↗
15. 10.1143/JJAP.47.60210.1143/JJAP.47.602 ↗
16. 10.1016/j.solmat.2010.06.01010.1016/j.solmat.2010.06.010 ↗
17. 10.1002/pssc.20098321710.1002/pssc.200983217 ↗
18. 10.1143/APEX.1.04120110.1143/APEX.1.041201 ↗
19. 10.1063/1.349928410.1063/1.3499284 ↗
20. 10.1016/0169-4332(95)00225-110.1016/0169-4332(95)00225-1 ↗
21. 10.1002/ejic.20090083710.1002/ejic.200900837 ↗
22. 10.1016/j.solmat.2008.09.00210.1016/j.solmat.2008.09.002 ↗
23. 10.1103/PhysRevB.81.24520410.1103/PhysRevB.81.245204 ↗
24. 10.1063/1.327349510.1063/1.3273495 ↗
25. 10.1016/0025-5408(74)90135-410.1016/0025-5408(74)90135-4 ↗
26. 10.1039/c0cc05064d10.1039/c0cc05064d ↗
27. 10.1149/1.348176410.1149/1.3481764 ↗
28. 10.1016/j.tsf.2010.12.09910.1016/j.tsf.2010.12.099 ↗
29. 10.1016/S0169-4332(02)00843-710.1016/S0169-4332(02)00843-7 ↗
30. 10.1016/j.ssc.2009.10.03210.1016/j.ssc.2009.10.032 ↗
31. 10.1016/j.tsf.2004.11.05410.1016/j.tsf.2004.11.054 ↗
32. 10.1016/j.solmat.2010.07.00810.1016/j.solmat.2010.07.008 ↗
33. 10.1016/S0927-0248(97)00119-010.1016/S0927-0248(97)00119-0 ↗
34. 10.1016/j.solmat.2004.07.04910.1016/j.solmat.2004.07.049 ↗