Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices
Source abstract
Abstract
We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO 2 on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl 4 ). Experimental results and theoretical calculations indicate that HfO 2 nucleation is more favorable on CVD graphene than on exfoliated graphene due to the existence of defect sites. Also, the TDMAH precursor showed much more unfavorable nucleation and growth than HfCl 4 due to different initial adsorption mechanisms, affecting lower leakage currents and breakdown electric field. ALD growth characteristics of HfO 2 will be fundamentally and practically significant for realizing the fabrication of graphene-based electronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Graphene research and applications · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea
Department of Chemistry, University of Eastern Finland, Joensuu 80101, Finland
Department of Materials Science and Engineering, Incheon National University, 406-840 Incheon, Korea
Funding
Korea Evaluation Institute of Industrial Technology · National Research Foundation of Korea · Ministry of Knowledge Economy
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