journal article·2006-06-01

Correlation among Order−Disorder, Electronic Levels, and Photoluminescence in Amorphous CT:Sm

Alberthmeiry T. de Figueiredo, Sergio de Lazaro, Elson Longo, Elaine C. Paris, José A. Varela, Miryam R. Joya, Paulo S. Pizani

Chemistry of Materials· Volume 18· Issue 12
Publisher page

Abstract

Ca 0.95 Sm 0.05 TiO 3 (CT:Sm) powder was prepared by the polymeric precursor method (PPM). Order−disorder at short and long range has been investigated by means of Raman spectroscopy, X-ray diffraction (XRD), and photoluminescence emission (PL) experimental techniques. The broad PL band and the Sm emission spectrum measured at room temperature indicate the increase of structural order with annealing temperature. The measured PL emission reveals that the PL intensity changes with the degree of disorder in the CT:Sm. The electronic structures were performed by the ab initio periodic method in the DFT level with the hybrid nonlocal B3LYP approximation. Theoretical results are analyzed in terms of DOS, charge densities, and Mulliken charges. Localized levels into the band gap of the CT:Sm material favor the creation of the electron−hole pair, supporting the observed room-temperature PL phenomenon.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Luminescence Properties of Advanced Materials · Nuclear materials and radiation effects

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

LIEC/CMDMC, Departamento de Química, UFSCar, Via Washington, Km 235, CP-676, CEP-13565-905, São Carlos, SP, Brazil, Instituto de Química, Universidade Estadual Paulista, CEP 14800-900, Araraquara, SP, Brazil, and Departamento de Física, Universidade Federal de São Carlos, Caixa Postal 676, São Carlos, 13565-905 SP, Brazil

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