journal article·2010-10-12

Critical Role of Screw Dislocation in the Growth of Co(OH)2 Nanowires as Intermediates for Co3O4 Nanowire Growth

Yanguang Li, Yiying Wu

Chemistry of Materials· Volume 22· Issue 19
Publisher page

Abstract

In our prior studies, we reported the growth of Co 3 O 4 nanowire arrays via the ammonia-evaporation-induced growth in solution and their promising applications in a Li-ion battery and oxygen evolution. Although we had identified that the growth of Co 3 O 4 nanowire went through the β-Co(OH) 2 intermediate, the growth mechanism of Co(OH) 2 nanowire was still elusive. The problem seemed to be rooted in its layered brucite crystal structure, which was not previously known to grow one-dimensionally (1D) perpendicular to the layers. In this paper, we present our recent discovery that axial screw dislocation is responsible for such longitudinal growth. Through bright-field transmission electron microscope (TEM) characterizations, the screw dislocation was directly observed as a dark-contrasted line along Co(OH) 2 nanowires. Emergent spiral growth steps provide active sites for immediate adsorption of incoming molecules, resulting in a fast spiral advance rate along the c -axis of the brucite crystal. This study shows a new example of the screw-dislocation driven growth of 1D nanostructures.
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Research context

OpenAlex topics: Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, The Ohio State University, 100 West 18th Avenue, Columbus, Ohio 43210

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