Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium

HfO 2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe 2 CH 2 OMe) 4 in the temperature range of 275−425 °C on borosilicate glass and Si(100) substrates. HfO 2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The adsorption of hafnium complex was not entirely self-limiting, probably because of the thermal decomposition of the precursors. Crystalline films containing the monoclinic HfO 2 phase were grown at temperatures exceeding 300−325 °C. The refractive index of the films varied between 1.8 and 2.0. The effective permittivities of the dielectrics in Al/HfO 2 /Si structures varied between 12 and 17.