Reactive Diffusion in the Re-Si System
Source abstract
Abstract
A study on reactive diffusion is conducted in the Re-Si system. According to the study, ReSi1.8 phase grows with much higher thickness than the Re2Si phase, in the interdiffusion zone of bulk diffusion couples. The activation energy for integrated diffusion of ReSi1.8 is estimated to be 605 ± 23 kJ/mol. The growth of the Re2Si phase is studied by considering an incremental diffusion couple of Re/ReSi1.8. Analysis based on the calculation of integrated diffusion coefficients indicates the reason underlying the observed high difference between the growth rates of the ReSi1.8 and Re2Si phases.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Intermetallics and Advanced Alloy Properties · Silicon and Solar Cell Technologies
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References (29)
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