Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)
Source abstract
Abstract
We report the growth of high-quality In2O3(111) thin films on Y-ZrO2(111) by oxygen plasma-assisted molecular beam epitaxy. Ordered epitaxial growth was confirmed by X-ray diffraction and high-resolution transmission electron microscopy. Combined surface analysis techniques showed that the films exhibit atomically flat terraces supporting unreconstructed In2O3(111)-(1 × 1) surfaces. Valence band spectra excited by X-ray at hν = 1486.6 eV and hν = 6000 eV revealed a pronounced accumulation of electrons close to the surface region.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA, United Kingdom
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
Department of Physics, National University of Singapore, Singapore 117542
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
Laboratorio TASC, INFM−CNR, Area Science Park, S.S. 14, Km 163.5, 34012 Trieste, Italy
Sincrotrone Trieste, S.C.p.A., S.S. 14, Km 163, Area Science Park, I-34012 Trieste, Italy
References (26)
Show source-provided references
1. Granqvist C. G. · Thin Solid Films · 2002 · 411 · 110.1016/S0040-6090(02)00163-3 ↗
2. Granqvist C. G. · Sol. Energy Mater. Sol. Cells · 2007 · 91 · 152910.1016/j.solmat.2007.04.031 ↗
3. Thomas G. · Nature · 1997 · 389 · 90710.1038/39999 ↗
4. Nomura K. · Science · 2003 · 300 · 126910.1126/science.1083212 ↗
5. Tsukazaki A. · Science · 2007 · 315 · 138810.1126/science.1137430 ↗
6. Chern M. Y. · Thin Solid Films · 2007 · 515 · 786610.1016/j.tsf.2007.04.023 ↗
7. Wang Ch. Y. · Cryst. Growth Des. · 2008 · 8 · 125710.1021/cg700910n ↗
8. Ohta H. · Appl. Phys. Lett. · 2000 · 76 · 274010.1063/1.126461 ↗
9. Bourlange A. · Appl. Phys. Lett. · 2008 · 92 · 09211710.1063/1.2889500 ↗
10. Morales E. H. · New J. Phys. · 2008 · 10 · 12503010.1088/1367-2630/10/12/125030 ↗
11. Bourlange A. · Chem. Mater. · 2008 · 20 · 455110.1021/cm800984r ↗
12. Weiher R. L. · J. Appl. Phys. · 1966 · 37 · 29910.1063/1.1707830 ↗
13. Hamberg I. · Phys. Rev. B · 1984 · 30 · 324010.1103/PhysRevB.30.3240 ↗
14. Erhart P. · Phys. Rev. B · 2007 · 75 · 15320510.1103/PhysRevB.75.153205 ↗
15. Christou V. · J. Appl. Phys. · 2000 · 88 · 518010.1063/1.1312847 ↗
16. Gassenbauer Y. · Phys. Rev. B · 2006 · 73 · 24531210.1103/PhysRevB.73.245312 ↗
17. Walsh A. · Phys. Rev. Lett. · 2008 · 100 · 16740210.1103/PhysRevLett.100.167402 ↗
18. Fuchs F. · Phys. Rev. B · 2008 · 77 · 15510710.1103/PhysRevB.77.155107 ↗
19. Ishii H. · Adv. Mater. · 1999 · 11 · 60510.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q ↗
20. Khodabakhsh S. · Adv. Funct. Mat. · 2006 · 16 · 9510.1002/adfm.200500207 ↗
21. Marezio M. · Acta Crystallogr. · 1966 · 20 · 72310.1107/S0365110X66001749 ↗
22. Moringa M. · Acta Crystallogr., Sect. A · 1979 · 35 · 78910.1107/S0567739479001807 ↗
23. Jeong J. I. · J. Vac. Sci. Technol. A · 1996 · 14 · 29310.1116/1.579891 ↗
24. King P. D. C. · Phys. Rev. Lett. · 2008 · 101 · 11680810.1103/PhysRevLett.101.116808 ↗
25. Sachhi M. · Phys. Rev. B · 2005 · 71 · 15511710.1103/PhysRevB.71.155117 ↗
26. Scofield J. H. · 197310.2172/4545040 ↗