Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
Source abstract
Abstract
Ru thin films were grown by pulsed chemical vapor deposition using RuO4 and 5% H2/95% N2 as the precursor and reducing gas, respectively. The film grown at 230 °C showed the best structural and electrical properties among the chemically grown Ru films ever reported.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151−744, Korea, and Air Liquide Laboratories, 28 Wadai, Tsukuba-Shi, Ibaraki 300−4247, Japan
References (11)
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