Highly Stable Monolayer Resists for Atomic Layer Deposition on Germanium and Silicon

In this paper, 1-alkenes and 1-alkynes are investigated for a new class of monolayer resists formed on the hydrogen-terminated surfaces of both germanium and silicon. A series of 1-alkenes and 1-alkynes with different chain lengths are explored as deactivating agents for atomic layer deposition of HfO 2 and Pt films. It is shown that to achieve satisfactory blocking of atomic layer deposition, densely packed, highly hydrophobic monolayers must be formed. A mechanism for the film formation and blocking processes is discussed and compared with that of alkylsilane-based self-assembled monolayer resists.