journal article·2005-07-01

Crystal Growth, Thermoelectric Properties, and Electronic Structure of AgBi3S5 and AgSbxBi3-xS5 (x = 0.3)

Jun-Ho Kim, Duck-Young Chung, Daniel Bilc, Sim Loo, Jarrod Short, Subhendra D. Mahanti, Tim Hogan, Mercouri G. Kanatzidis

Chemistry of Materials· Volume 17· Issue 14
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Abstract

The compound AgBi 3 S 5 ( I ) (synthetic pavonite) and its solid solution AgSb x Bi 3 - x S 5 ( x = 0.3) ( II ) were prepared by direct combination of elemental Ag, Bi, Sb, and S. They crystallize in the monoclinic space group C 2/ m with a = 13.345(3) Å, b = 4.0416(8) Å, c = 16.439(3) Å, and β = 94.158(3)° for I and a = 13.302(4) Å, b = 4.0381(11) Å, c = 16.388(5) Å, and β = 94.347(5)° for II . The Bridgman technique was used to grow bulk crystals of these materials. The crystal structure refinements, physicochemical properties, and thermoelectric properties of these materials are presented. The thermoelectric power for AgBi 3 S 5 and AgSb 0.3 Bi 2.7 S 5 showed −64 and −98 μV/K, respectively, with room-temperature electrical conductivity of 489 and 260 S/cm. The thermal conductivity for both compounds at room temperature was measured to be very low at ∼1 W/m·K, respectively. Electronic band structure calculations for AgBi 3 S 5 suggest the importance of silver d-states to the charge transport and also indicate the presence of an indirect energy gap.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Departments of Chemistry, Physics and Astronomy, and Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824

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