Chemical Vapor Deposition of Indium Selenide and Gallium Selenide Thin Films from Mixed Alkyl/Dialkylselenophosphorylamides

The syntheses and characterizations of the mixed alkyl/dialkylselenophosphorylamides, [Me 2 Ga(SeP i Pr 2 ) 2 N] ( 1 ) and [R 2 In(SeP i Pr 2 ) 2 N] (R = Me ( 2 ), Et ( 3 )) are reported together with the X-ray single-crystal structures of [Me 2 M(SeP i Pr 2 ) 2 N] (M = Ga(III) or In(III)), which have Se 2 C 2 coordination at the metal centers. These compounds have been used as single-source precursors for the deposition of metal (Ga or In) selenides films on glass substrates by MOCVD. Ga 2 Se 3 thin films have been deposited from compound 1 by aerosol-assisted chemical vapor deposition (AACVD) and low-pressure metal-organic chemical vapor deposition (LP-MOCVD). X-ray powder diffraction (XRPD) studies show that the films are composed of cubic Ga 2 Se 3 . Indium selenide (In 2 Se 3 ) thin films have been grown from compound 2 by AACVD and all the as-deposited indium selenide films are found to be hexagonal γ-In 2 Se 3 .