Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches
Source abstract
Abstract
The capability to tune the dopant concentrations of oxygen vacancies and other impurities in atomic layer deposited oxide films is crucial for engineering contemporary electronic device properties. For memristor applications, the composition of the oxides needs to be tuned within a certain range with process windows different from the traditional studies. Accordingly, the unusal growth modes, such as the non-self-limited growth, become valuable to explore as demonstrated here.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Hewlett-Packard Laboratories, Palo Alto, California, United States
Electrical Engineering Department, Baskin School of Engineering, University of California, Santa Cruz, California, United States
References (34)
Show source-provided references
1. Waser R. · Adv. Mater. · 2009 · 21 · 263210.1002/adma.200900375 ↗
2. Norton D. P. · Mater. Sci. Eng., R · 2004 · 43 · 13910.1016/j.mser.2003.12.002 ↗
3. Szot K. · Nat. Mater. · 2006 · 5 · 31210.1038/nmat1614 ↗
4. Yang J. J. · Appl. Phys. Lett. · 2010 · 97 · 23210210.1063/1.3524521 ↗
5. Kwon D. H. · Nat. Nanotechnol. · 2010 · 5 · 14810.1038/nnano.2009.456 ↗
6. Sanchez M. J. · Appl. Phys. Lett. · 2007 · 91 · 25210110.1063/1.2824382 ↗
7. Chae S. C. · Adv. Mater. · 2008 · 20 · 115410.1002/adma.200702024 ↗
8. Park C. · Appl. Phys. Lett. · 2008 · 93 · 04210210.1063/1.2963983 ↗
9. Yang J. J. · Adv. Mater. · 2009 · 21 · 375410.1002/adma.200900822 ↗
10. Choi B. J. · J. Appl. Phys. · 2005 · 98 · 03371510.1063/1.2001146 ↗
11. Gergel-Hackett N. · IEEE Electron Device Lett. · 2009 · 30 · 70610.1109/LED.2009.2021418 ↗
12. Snider G. S. · 2008 · 8510.1109/NANOARCH.2008.4585796 ↗
13. Borghetti J. · Nature · 2010 · 464 · 87310.1038/nature08940 ↗
14. Xia Q. F. · Nano Lett. · 2009 · 9 · 364010.1021/nl901874j ↗
15. Inoue I. H. · Adv. Funct. Mater. · 2008 · 18 · 228910.1002/adfm.200800558 ↗
16. Knauth P. · J. Appl. Phys. · 1999 · 85 · 89710.1063/1.369208 ↗
17. Strukov D. B. · Nature · 2008 · 453 · 8010.1038/nature06932 ↗
18. Chua L. O. · IEEE Trans. Circuit Theory · 1971 · 18 · 50710.1109/TCT.1971.1083337 ↗
19. Chua L. O. · Proc. IEEE · 1976 · 64 · 20910.1109/PROC.1976.10092 ↗
20. Janousch M. · Adv. Mater. · 2007 · 19 · 223210.1002/adma.200602915 ↗
21. Yang J. J. · Nature Nanotechnol. · 2008 · 3 · 42910.1038/nnano.2008.160 ↗
22. Yang J. J. · Nanotechnology · 2009 · 20 · 21520110.1088/0957-4484/20/21/215201 ↗
23. Miao F. · Appl. Phys. Lett. · 2009 · 95 · 11350310.1063/1.3227651 ↗
24. Pickett M. D. · J. Appl. Phys. · 2009 · 106 · 07450810.1063/1.3236506 ↗
25. George S. M. · Chem. Rev. · 2009 · 110 · 11110.1021/cr900056b ↗
26. Kim S. K. · Appl. Phys. Lett. · 2004 · 85 · 411210.1063/1.1812832 ↗
27. Puurunen R. L. · J. Appl. Phys. · 2005 · 97 · 12130110.1063/1.1940727 ↗
28. Nalwa H. S. · 2002 · 1
29. Kaupo K. · J. Vac. Sci. Technol., A · 1997 · 15 · 221410.1116/1.580536 ↗
30. Elam J. W. · Thin Solid Films · 2003 · 436 · 14510.1016/S0040-6090(03)00533-9 ↗
31. Xie Q. · J. Appl. Phys. · 2007 · 102 · 08352110.1063/1.2798384 ↗
32. Weibel A. · Solid State Ionics · 2006 · 177 · 22910.1016/j.ssi.2005.11.002 ↗
33. Strukov D. B. · Small · 2009 · 5 · 105810.1002/smll.200801323 ↗
34. Yang J. J. · Adv. Mater. · 2010 · 22 · 403410.1002/adma.201000663 ↗