Low-Temperature Growth of Single-Walled Carbon Nanotubes by Plasma Enhanced Chemical Vapor Deposition

Single-walled carbon nanotubes (SWNTs) were successfully grown on SiO 2 /Si substrates at 450 °C by remote plasma enhanced chemical vapor deposition with a plasma power of 15 W. The ratio of D-band (disorder-induced mode) to G-band (tangential stretching mode) in the Raman spectra, an indicator of nanotube quality, is about 0.1 owing to their good quality. Even at 400 °C, SWNTs were also grown with low plasma power (<40 W), although the I D / I G ratios are higher than those at 450 °C. It is discussed that for low-temperature growth of SWNTs, the plasma power should be held at a low level to avoid the formation of disordered or amorphous carbons. The low-temperature growth of SWNTs may enable compatible integration of SWNTs with current complementary metal-oxide-silicon technology.