Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition
Source abstract
Abstract
The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 Å/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.
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Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
Department of Physics, University of Jyväskylä, 40014 Jyväskylä, Finland,
SAFC Hitech, 1429 Hilldale Avenue, Haverhill, Massachusetts 01832, United States
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