Room-Temperature Atomic Layer Deposition of Platinum

Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe 3 dosing, O 2 plasma exposure, and H 2 gas or H 2 plasma exposure. The H 2 pulses were used to reduce the PtO x that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.