journal article·1998-09-01

Tin Oxide Films Made by Physical Vapor Deposition-Thermal Oxidation and Spray Pyrolysis

Sang Hyun Park, Young Chan Son, William S. Willis, Steven L. Suib, Kenneth E. Creasy

Chemistry of Materials· Volume 10· Issue 9
Publisher page

Abstract

Tin oxide films have been prepared by physical vapor deposition of Sn followed by thermal oxidation and by spray pyrolysis of SnCl 4 or SnCl 4 ·5H 4 O mixed with CH 3 OH. Phase changes and surface morphologies during the syntheses were monitored by X-ray diffraction and scanning electron microscopy. Electrical resistance and UV−visible transmittance of tin oxide films prepared by both methods were measured. The peak shapes of the Auger Sn M 4 N 45 N 45 transition of the prepared tin oxide films were compared to those of commercial SnO and SnO 2 and used to determine rough values of the oxidation state of Sn. Oxygen/tin ratios in the films were determined from analyses of scanning Auger microprobe and X-ray photoelectron spectroscopy and are all less than 2. Auger depth profiles with thermally oxidized tin oxide films on glass substrates show an overlapping region between the tin oxide film and the substrate. These films were tested as sensors for CH 2 Cl 2 in O 2 . The mixed phase (SnO·SnO 2 ) tin oxide films prepared by temperature-programmed thermal oxidation of Sn showed better sensing behavior to CH 2 Cl 2 than single phase (SnO or SnO 2 ) films.
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Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Analytical Chemistry and Sensors

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Affiliations

Department of Chemistry, Box U-60, Institute of Materials Science, and Department of Chemical Engineering, University of Connecticut, Storrs, Connecticut 06269-4060, and Olin Chemicals, Olin Corporation, 350 Knotter Drive, POB 586, Cheshire, Connecticut 06410-0586

References (29)

Show source-provided references
1. Schierbaum K. D. · Sens. Actuators B · 1990 · 2 · 7810.1016/0925-4005(90)80011-N ↗
2. Principi G. · Hyperfine Interactions · 1991 · 69 · 622
3. Omar O. A. · J. Mater. Sci. Mater. Electronics · 1990 · 1 · 83
4. Vasu V. · Thin Solid Films · 1991 · 202 · 28810.1016/0040-6090(91)90099-J ↗
5. Acosta D. R. · J. Mater. Sci. Mater. Electronics · 1993 · 4 · 19110.1007/BF00224738 ↗
6. Miki-Yoshida M. · Thin Solid Films · 1993 · 224 · 9610.1016/0040-6090(93)90463-Y ↗
7. Maddalena A. · J. Non-Crystalline Solids · 1990 · 121 · 36910.1016/0022-3093(90)90159-J ↗
8. Oyabu T. · Appl. Phys. · 1982 · 53 · 2787
9. Kulkarni A. K. · Thin Solid Films · 1992 · 220 · 32610.1016/0040-6090(92)90592-Y ↗
10. Lalauze R. · Sens. Actuators · 1984 · 8 · 233
11. Miki-Yoshida M. · Thin Solid Films · 1993 · 224 · 9610.1016/0040-6090(93)90463-Y ↗
12. Yoo K. S. · 1995
13. Chung W. Y. · 1995
14. Themlin J. M. · Phys. Rev. B · 1992 · 46 · 2466
15. Jie L. · J. Non-Crystalline Solids · 1990 · 119 · 40
16. Suib S. L. · J. Solid State Chem. · 1980 · 31 · 392
17. Hoflund G. B. · J. Chem. Mater. · 1994 · 6 · 56810.1021/cm00040a036 ↗
18. Drawdy J. E. · Surf. Interface Anal. · 1992 · 19 · 56410.1002/sia.7401901104 ↗
19. Kim K. H. · J. Electrochem. Soc. · 1991 · 138 · 241210.1149/1.2085987 ↗
20. de Fresart E. · Solid State Commun. · 1980 · 37 · 17
21. Sperry E. A. · J. Soc. Chem. Ind. · 1908 · 27 · 31410.1002/jctb.5000270705 ↗
22. Segal S. R. · J. Chem. Mater. · 1997 · 9 · 104
23. 1995
24. Vasu V. · Thin Solid Films · 1990 · 193 · 980
25. Lin A. W. C. · Anal. Chem. · 1977 · 49 · 123510.1021/ac50016a043 ↗
27. Gordillo G. · Thin Solid Films · 1994 · 252 · 6610.1016/0040-6090(94)90826-5 ↗
28. Cheong H. H. · 1992
29. Park S. H., Ph.D. · 1997