Morphologically Selective Synthesis of Nanocrystalline Aluminum Nitride
Source abstract
Abstract
Aluminum and N 2 (1 atm) react at 900−1100 °C to give AlN. The nitridation reactions of four types of starting Al powder nanocrystalline Al of two different origins, and 2-μm and 20-μm Al powders from commercial sources are described. All four Al powders undergo nitridation to give nanocrystalline AlN; however, only the nanocrystalline Al powders undergo nitridation completely at the low temperatures employed. The nanocrystalline AlN is formed in two principal particle morphologies, equiaxed nanoparticles and nanowhiskers, in relative amounts that depend on reaction conditions and the starting Al powders. Added AlCl 3 is an effective promoter of nanowhisker growth. Either AlN morphology may be produced with a high selectivity; samples containing predominately equiaxed nanoparticles or predominately nanowhiskers are readily obtained. The results are consistent with a growth model in which the equiaxed AlN nanoparticles precipitate at or near the surface of coalesced liquid Al droplets, whereas the AlN nanowhiskers grow apart from the Al droplets in a vapor-transport process mediated by AlCl 3 and Al subchloride intermediates.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · MXene and MAX Phase Materials · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Departments of Chemistry and Physics, Washington University, St. Louis, Missouri 63130-4899
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