Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers
Source abstract
Abstract
Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm –1 K –2, by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
Department of Mechanical Engineering, University of Houston, Houston, Texas 77204, United States
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Funding
Basic Energy Sciences
References (52)
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