Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
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Abstract
ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTGrowth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2OJeong Hwan Han†, Yoon Jang Chung†, Bo Keun Park†, Seong Keun Kim‡, Hyo-Suk Kim†, Chang Gyoun Kim*†, and Taek-Mo Chung*†View Author Information† Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 305-600, Republic of Korea‡ Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea*(C.G.K.) E-mail: [email protected]*(T.-M.C.) E-mail: [email protected]Cite this: Chem. Mater. 2014, 26, 21, 6088–6091Publication Date (Web):October 21, 2014Publication History Received24 August 2014Revised8 October 2014Published online23 October 2014Published inissue 11 November 2014https://pubs.acs.org/doi/10.1021/cm503112vhttps://doi.org/10.1021/cm503112vrapid-communicationACS PublicationsCopyright © 2014 American Chemical SocietyRequest reuse permissionsArticle Views3792Altmetric-Citations76LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (1)»Supporting Information Supporting Information SUBJECTS:Atomic layer deposition,Deposition,Electrical conductivity,Oxides,Precursors Get e-Alerts
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Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 305-600, Republic of Korea
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea
Funding
National Research Council of Science & Technology (NST) of Republic of Korea
References (30)
Show source-provided references
1. Fortunato E. · Adv. Mater. · 2012 · 24 · 294510.1002/adma.201103228 ↗
2. Kim H.-J. · Sens. Actuators, B · 2014 · 192 · 60710.1016/j.snb.2013.11.005 ↗
3. Jose R. · J. Am. Ceram. Soc. · 2009 · 92 · 28910.1111/j.1551-2916.2008.02870.x ↗
4. Nomura K. · Nature · 2004 · 432 · 48810.1038/nature03090 ↗
5. Park S.-H. K. · Electrochem. Solid-State Lett. · 2008 · 11 · H1010.1149/1.2801017 ↗
6. Sung S.-Y. · Appl. Phys. Lett. · 2010 · 97 · 22210910.1063/1.3521310 ↗
7. Suh S. · Chem. Mater. · 1997 · 9 · 73010.1021/cm960423t ↗
8. Liu W. · J. Am. Chem. Soc. · 2010 · 132 · 249810.1021/ja908521s ↗
9. Chavillon B. · J. Am. Chem. Soc. · 2012 · 134 · 46410.1021/ja208044k ↗
10. Caraveo-Frescas J. A. · ACS Nano · 2013 · 7 · 516010.1021/nn400852r ↗
11. Fortunato E. · Appl. Phys. Lett. · 2010 · 97 · 05210510.1063/1.3469939 ↗
12. Dhananjay C. W. · Appl. Phys. Lett. · 2008 · 92 · 23210310.1063/1.2936275 ↗
13. Yabuta H. · Appl. Phys. Lett. · 2010 · 97 · 7211110.1063/1.3478213 ↗
14. Nomura K. · Adv. Mater. · 2011 · 23 · 343110.1002/adma.201101410 ↗
15. Ogo Y. · Appl. Phys. Lett. · 2008 · 93 · 03211310.1063/1.2964197 ↗
16. Dai Z. R. · Adv. Funct. Mater. · 2003 · 13 · 910.1002/adfm.200390013 ↗
17. Pan X. Q. · Appl. Phys. Lett. · 2001 · 89 · 6048
18. Du X. · J. Vac. Sci. Technol. A · 2005 · 23 · 58110.1116/1.1914810 ↗
19. Sundqvist J. · Chem. Vap. Deposition · 2003 · 9 · 2110.1002/cvde.200290002 ↗
20. Elam J. W. · J. Vac. Sci. Technol. A · 2008 · 26 · 24410.1116/1.2835087 ↗
21. Heo J. · Chem. Mater. · 2010 · 22 · 496410.1021/cm1011108 ↗
22. Mullings M. N. · J. Vac. Sci. Technol. A · 2013 · 31 · 06150310.1116/1.4812717 ↗
23. Kim, C. G.; Chung, T.M.; Lee, Y. K.; An, K.S.; Lee, S. S.; Ryu, B. H.; Jang, S. J.U.S. Patent 8030507, 2011.
24. Choi M.-J. · Appl. Surf. Sci. · 2014 · 320 · 18810.1016/j.apsusc.2014.09.054 ↗
25. Nyns L. · J. Electrochem. Soc. · 2008 · 155 · G26910.1149/1.2980427 ↗
26. Yang T. S. · J. Vac. Sci. Technol. A · 2005 · 23 · 123810.1116/1.1875172 ↗
27. Caraveo-Frescas J. A. · Appl. Phys. Lett. · 2013 · 103 · 22210310.1063/1.4833541 ↗
28. Lee B. K. · Mater. Res. Bull. · 2012 · 47 · 305210.1016/j.materresbull.2012.04.120 ↗
29. Togo A. · Phys. Rev. B · 2006 · 74 · 19512810.1103/PhysRevB.74.195128 ↗
30. Guo W. · Appl. Phys. Lett. · 2010 · 96 · 04211310.1063/1.3277153 ↗