Organometallic azides as precursors for aluminum nitride thin films
Source abstract
Abstract
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTOrganometallic azides as precursors for aluminum nitride thin filmsDavid C. Boyd, Richard T. Haasch, Daniel R. Mantell, Roland K. Schulze, John F. Evans, and Wayne L. GladfelterCite this: Chem. Mater. 1989, 1, 1, 119–124Publication Date (Print):January 1, 1989Publication History Published online1 May 2002Published inissue 1 January 1989https://pubs.acs.org/doi/10.1021/cm00001a023https://doi.org/10.1021/cm00001a023research-articleACS PublicationsRequest reuse permissionsArticle Views306Altmetric-Citations87LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose Get e-Alerts
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.