journal article·2001-12-01

Growth of Crystalline Cu2S Nanowire Arrays on Copper Surface: Effect of Copper Surface Structure, Reagent Gas Composition, and Reaction Temperature

Suhua Wang, Shihe Yang

Chemistry of Materials· Volume 13· Issue 12
Publisher page

Abstract

The effect of copper surface structure, reagent gas composition, and reaction temperature on the growth of Cu 2 S nanowire arrays has been systematically investigated. Possible mechanisms for the Cu 2 S nanowire growth on copper surface have been discussed on the basis of the results of the present and previous works. The common feature of the proposed mechanisms for the Cu 2 S nanowire growth lies in the facile diffusion of the sulfur and copper species.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

References (18)

Show source-provided references
1. Atomic · 1997
2. Wagner R. S. · Appl. Phys. Lett. · 1964 · 4 · 8910.1063/1.1753975 ↗
3. Wagner R. S. · 1970
4. Trentler T. J. · Science · 1995 · 270 · 179110.1126/science.270.5243.1791 ↗
5. Lieber C. M. · Solid State Communications · 1998 · 107 · 60710.1016/S0038-1098(98)00209-9 ↗
6. Morales A. M. · Science · 1998 · 279 · 20810.1126/science.279.5348.208 ↗
7. Lee S. T. · J. Mater. Res. · 1999 · 14 · 450310.1557/JMR.1999.0611 ↗
8. Yan H. F. · Chem. Phys. Lett. · 2000 · 323 · 22410.1016/S0009-2614(00)00519-4 ↗
9. Berry A. D. · Appl. Phys. Lett. · 1996 · 69 · 284610.1063/1.117338 ↗
10. Fritzsche W. · Appl. Phys. Lett. · 1999 · 75 · 285410.1063/1.125172 ↗
11. Wang S. H. · Langmuir · 2000 · 16 · 38910.1021/la990780t ↗
12. Wang S. H. · Chem. Phys. Lett. · 2000 · 10 · 39
13. Wang S. H. · Adv. Mater. Opt. Electron. · 2000 · 322 · 567
14. Epitaxial Growth Principles · 1999
15. 1998
16. Wang S. H. · Phys. Chem. Chem. Phys. · 2001 · 3 · 375010.1039/b104046b ↗
17. Wang N. · J. Cryst. Growth · 2001 · 233 · 22610.1016/S0022-0248(01)01576-7 ↗
18. Feibelman P. · J. Phys. Rev. Lett. · 2000 · 85 · 60610.1103/PhysRevLett.85.606 ↗