journal article·2008-09-23

A Highly Sensitive and Fast-Responding Ethanol Sensor Based on CdIn2O4 Nanocrystals Synthesized by a Nonaqueous Sol−Gel Route

Minhua Cao, Yude Wang, Ting Chen, Markus Antonietti, Markus Niederberger

Chemistry of Materials· Volume 20· Issue 18
Publisher page

Abstract

CdIn 2 O 4 nanoparticles with crystallite sizes of about 10 nm were obtained by a nonaqueous sol−gel route involving the reaction of cadmium acetate and indium isopropoxide in benzyl alcohol. Without the use of any additional stabilizing agents, the crystal growth is restricted by the solvent and/or by the organic reaction products. The as-fabricated sensor showed high response, fast response, and recovery times toward ethanol gas. The performance of a home-built CdIn 2 O 4 nanocrystal sensor was even better than the competing SnO 2 and In 2 O 3 sensors, making this material not only interesting for sensor devices, but also for a number of related electrochemical applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Advanced Chemical Sensor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max Planck Institute of Colloids and Interfaces, Colloid Department, Research Campus Golm, 14424 Potsdam, Germany, Department of Chemistry, Northeast Normal University, 13324, Changchun, China, Department of Materials Science and Engineering, Yunnan University, 650091, Kunming, China, and Swiss Federal Institute of Technology (ETH) Zürich, Department of Materials, Wolfgang-Pauli-Strasse 10, 8093 Zürich, Switzerland

References (38)

Show source-provided references
1. Franke M. E. · Small · 2006 · 2 · 3610.1002/smll.200500261 ↗
2. Eranna G. · Crit. Rev. Solid State Mater. Sci. · 2004 · 29 · 11110.1080/10408430490888977 ↗
3. Law M. · Angew. Chem. · 2002 · 114 · 251110.1002/1521-3757(20020703)114:13<2511::AID-ANGE2511>3.0.CO;2-N ↗
4. Angew. Chem., Int. Ed. · 2002 · 41 · 240510.1002/1521-3773(20020703)41:13<2405::AID-ANIE2405>3.0.CO;2-3 ↗
5. Comini E. · Appl. Phys. Lett. · 2002 · 81 · 186910.1063/1.1504867 ↗
6. Li C. · Appl. Phys. Lett. · 2003 · 82 · 161310.1063/1.1559438 ↗
7. Wang Y. L. · J. Am. Chem. Soc. · 2003 · 125 · 1617610.1021/ja037743f ↗
8. Liu J. F. · Adv. Mater. · 2005 · 17 · 76410.1002/adma.200400993 ↗
9. Yamazoe N. · Sens. Actuators, B · 1991 · 5 · 710.1016/0925-4005(91)80213-4 ↗
10. Pinna N. · Angew. Chem., Int. Ed. · 2004 · 43 · 434510.1002/anie.200460610 ↗
11. Sahm T. · Sens. Actuators B · 2004 · 98 · 14810.1016/j.snb.2003.10.003 ↗
12. Kurihara L. K. · Chem. Mater. · 1993 · 5 · 60910.1021/cm00029a006 ↗
13. Mao Y. B. · Chem. Commun. · 2005 · 572110.1039/b509960a ↗
14. Niederberger M. · Angew. Chem., Int. Ed. · 2004 · 43 · 227010.1002/anie.200353300 ↗
15. Garnweitner G. · Chem. Mater. · 2005 · 17 · 459410.1021/cm0503376 ↗
16. Garnweitner G. · J. Am. Ceram. Soc. · 2006 · 89 · 180110.1111/j.1551-2916.2006.01005.x ↗
17. Niederberger M. · Chem.—Eur. J. · 2006 · 12 · 728210.1002/chem.200600313 ↗
18. Li B. · Phys. Status Solidi, A · 2004 · 201 · 96010.1002/pssa.200306770 ↗
19. Zakrzewskta K. · Phys. Status Solidi, A · 1987 · 99 · 14110.1002/pssa.2210990117 ↗
20. Peng D. L. · Phys. Status Solidi, A · 1993 · 136 · 44110.1002/pssa.2211360217 ↗
21. Shannon R. D. · J. Phys. Chem. Solids · 1977 · 38 · 87710.1016/0022-3697(77)90126-3 ↗
22. Chu X. F. · Sens. Actuators, B · 1999 · 61 · 1910.1016/S0925-4005(99)00269-5 ↗
23. Chu X. F. · Mater. Res. Bull. · 1999 · 34 · 69310.1016/S0025-5408(99)00074-4 ↗
24. Wang S. X. · Rare Met. Mater. Eng. · 2002 · 31 · 73
25. Pinna N. · Small · 2005 · 1 · 11210.1002/smll.200400014 ↗
26. Mcaleer J. F. · J. Chem. Soc., Faraday Trans. I · 1987 · 85 · 132310.1039/f19878301323 ↗
27. Takata M. · J. Am. Ceram. Soc. · 1976 · 59 · 410.1111/j.1151-2916.1976.tb09374.x ↗
28. Wang Y. D. · Solid-State Electron. · 2001 · 45 · 63910.1016/S0038-1101(01)00126-5 ↗
29. Dong Y. F. · Sens. Actuators, B · 2000 · 67 · 25410.1016/S0925-4005(00)00515-3 ↗
30. Li B. X. · Langmuir · 2006 · 22 · 938010.1021/la061844k ↗
31. Chu X. F. · Chem. Phys. Lett. · 2004 · 399 · 46110.1016/j.cplett.2004.10.053 ↗
32. Chiu H. C. · J. Phys. Chem. C · 2007 · 111 · 725610.1021/jp0688355 ↗
33. Sun F. Q. · Adv. Mater. · 2005 · 17 · 287210.1002/adma.200500936 ↗
34. Liu Y. · Chem. Mater. · 2005 · 17 · 399710.1021/cm050451o ↗
35. Zakrzewskta K. · Phys. Status Solidi, A · 1987 · 99 · 14110.1002/pssa.2210990117 ↗
36. Wolkenstein, T.Electronic Processes on Semiconductor Surfaces during Chemisorption;Plenum:New York,199135182
37. Wu X. H. · Mater. Lett. · 2002 · 56 · 73210.1016/S0167-577X(02)00604-3 ↗
38. Wang Y. D. · Mater. Lett. · 2001 · 49 · 36110.1016/S0167-577X(00)00400-6 ↗