Ga₂O₃ Nanoribbons: Synthesis, Characterization, and Electronic Properties

Semiconductive Ga 2 O 3 nanoribbons have been synthesized via hydrogen-assisted thermal evaporation at 1000 °C. The width of the nanoribbons could be controlled by adjusting the content of hydrogen in a mixture of carrier gases. The room-temperature photoluminescence spectrum reveals that there exists a strong blue emission band centered at 430 nm. The blue emission is mainly attributed to the oxygen vacancies in the Ga 2 O 3 nanoribbons. We have fabricated a Schottky junction diode, utilizing individual Ga 2 O 3 nanoribbons, and studied its electrical transport properties. The measured current−voltage characteristic exhibited clear rectifying behavior with a turn-on voltage of 0.5 V and a rectification ratio of 2.5 × 10 4 at ±2 V.