Interband Transitions in Sol−Gel-Derived ZrO2 Films under Different Calcination Conditions
Source abstract
Abstract
Different types of interband transitions as well as the microstructures and O/Zr ratios in sol−gel-derived ZrO 2 films calcined at elevated temperatures in air or N 2 were systematically examined to clarify the formation of different band structures in the structural ZrO 2 films. Optical absorptions indicate that the structural ZrO 2 films all contain direct-band transitions, while the occurrence of indirect-band and band-tail transitions depends on O/Zr ratios. Band tails mainly result from imperfect structures in the grain boundaries and appear in the ZrO 2 films with O/Zr ≥ 2. When the ZrO 2 films are non-stoichiometric (O/Zr < 2), indirect-band transitions occur due to the folded bands caused by lattice oxygen vacancies. Monoclinic ZrO 2 has two direct-band transitions with bandgaps of 5.02−5.08 and 5.83−6.01 eV. The valence-band XPS spectra indicate that an additional occupied sub-band is located above its valence band. Indirect bandgaps in the monoclinic ZrO 2 films are in the range of 5.00−5.10 eV. Amorphous ZrO 2 films exhibit indirect-band transitions with bandgaps of 5.01−5.47 eV followed by direct-band transitions with bandgaps of 5.90−6.12 eV. In addition, tetragonal ZrO 2 contains direct bandgaps of 5.32−5.74 eV and indirect bandgaps of 4.72−5.40 eV. Size-dependent bandgaps are observed in the sol−gel-derived ZrO 2 films calcined in air, while the exponential dependence of bandgaps on O/Zr ratios is obtained in the ZrO 2 films calcined in N 2 . The discrepancy is primarily due to different fates of oxygen vacancies resulting from different calcination atmospheres.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Environmental Engineering, National Chiao Tung University, 75, Po Ai Street, Hsinchu, 30068, Taiwan, and Department of Biomedical Engineering and Environmental Sciences, National Tsing Hua University, 101, Sec 2, Kuang Fu Road, Hsinchu, 30013, Taiwan
References (31)
Show source-provided references
1. Chen Y. Y. · J. Solid State Ionics · 2006 · 177 · 35110.1016/j.ssi.2005.10.010 ↗
2. Sohn J. R. · Catal. Today · 2006 · 116 · 14310.1016/j.cattod.2006.01.023 ↗
3. Rignanese, G. M.; Gonze, X.; Jun, G.; Cho, K. J.; Pasquarello, A.Phys. Rev. B: Condens. Matter Mater. Phys.2004,69.10.1103/PhysRevB.69.184301 ↗
4. Navio J. A. · Langmuir · 2001 · 17 · 20210.1021/la000897d ↗
5. Botta S. G. · J. Photochem. Photobiol., A · 1999 · 129 · 8910.1016/S1010-6030(99)00150-1 ↗
6. Zavodinsky V. G. · Phys. Solid State · 2004 · 46 · 45310.1134/1.1687859 ↗
7. Miyazaki S. · Appl. Surf. Sci. · 2002 · 190 · 6610.1016/S0169-4332(01)00841-8 ↗
8. French, R. H.; Glass, S. J.; Ohuchi, F. S.; Xu, Y. N.; Ching, W. Y.Phys.Rev. B: Condens. Matter Mater. Phys.1994,49, 5133.10.1103/PhysRevB.49.5133 ↗
9. Gao Y. F. · Chem. Mater. · 2004 · 16 · 261510.1021/cm049771i ↗
10. Emeline A. · Langmuir · 1998 · 14 · 501110.1021/la980083l ↗
11. Hannink R. H. J. · J. Am. Ceram. Soc. · 2000 · 83 · 46110.1111/j.1151-2916.2000.tb01221.x ↗
12. Nishizaki T. · J. Alloys Compd. · 2002 · 330 · 30710.1016/S0925-8388(01)01447-5 ↗
13. Orlando, R.; Pisani, C.; Roetti, C.; Stefanovich, E.Phys. Rev. B: Condens. Matter Mater. Phys.1992,45, 592.10.1103/PhysRevB.45.592 ↗
14. Zandiehnadem F. · Physica B (Amsterdam, Netherlands) · 1988 · 150 · 1910.1016/0378-4363(88)90099-X ↗
15. Kralik, B.; Chang, E. K.; Louie, S. G.Phys. Rev. B: Condens. MatterMater. Phys.1998,57, 7027.10.1103/PhysRevB.57.7027 ↗
16. Liu, F. X.; Yang, J. L.; Zhao, T. P.Phys. Rev. B: Condens. MatterMater. Phys.1997,55, 8847.
17. Kwok C. K. · J. Appl. Phys. · 1989 · 66 · 275610.1063/1.344484 ↗
18. Aita C. R. · J. Am. Ceram. Soc. · 1990 · 73 · 320910.1111/j.1151-2916.1990.tb06439.x ↗
19. Aita C. R. · Appl. Phys. Lett. · 2003 · 82 · 67710.1063/1.1543234 ↗
20. Ito T. · J. Appl. Phys. · 2005 · 97 · 5410410.1063/1.1856220 ↗
21. Chang S. M. · Thin Solid Films · 2005 · 489 · 1710.1016/j.tsf.2005.04.076 ↗
22. Chang S. M. · Chem. Mater. · 2005 · 17 · 483710.1021/cm051264t ↗
23. Stefanic G. · Croat. Chem. Acta · 2002 · 75 · 727
24. Kosacki I. · Appl. Phys. Lett. · 1999 · 74 · 34110.1063/1.123065 ↗
25. Urbach F. · Phys. Rev. · 1953 · 92 · 132410.1103/PhysRev.92.1324 ↗
26. Pankove J. I. · 1971
27. Morant, C.; Sanz, J. M.; Galan, L.Phys. Rev. B: Condens. MatterMater. Phys.1992,45, 1391.10.1103/PhysRevB.45.1391 ↗
28. Dash, L. K.; Vast, N.; Baranek, P.; Cheynet, M. C.; Reining, L.Phys.Rev. B: Condens. Matter Mater. Phys.2004,70, 245116.10.1103/PhysRevB.70.245116 ↗
29. Lucovsky G. · Phys. Status Solidi B · 2004 · 241 · 222110.1002/pssb.200404938 ↗
30. Foster A. S. · J. Non-Cryst. Solids · 2002 · 303 · 10110.1016/S0022-3093(02)00974-2 ↗
31. Katsumata H. · J. Appl. Phys. · 1996 · 80 · 595510.1063/1.363591 ↗