Gallium Imide, {Ga(NH)3/2}n, a New Polymeric Precursor for Gallium Nitride Powders
Source abstract
Abstract
The efficient preparation of the new polymeric gallium imide {Ga(NH)3/2}n from the reaction between [Ga(NMe2)3]2 and NH3 at ambient temperatures is described. The gallium imide precursor is shown by TEM and XRD studies to yield upon pyrolysis a rare cubic/hexagonal variety of gallium nitride, GaN. Some control over the average particle size of GaN in the nanosized region is achieved by application of various pyrolysis schemes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry Paul M. Gross Chemical Laboratory, Duke University Durham, North Carolina 27708-0346
References (20)
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