Modeling of betavoltaic cells GaN using a Monte Carlo calculation

Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria; Z. Tiouti; A. Talhi; Laboratoty of environmental and energetics systems (L.S.E.E) at university center Ali Kafi Tindouf Algeria; B. Azeddine; Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria; A. Helmaoui; Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria

doi:10.15251/jor.2022.185.691

journal article·2022-11-03Open access

Modeling of betavoltaic cells GaN using a Monte Carlo calculation

Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria, Z. Tiouti, A. Talhi, Laboratoty of environmental and energetics systems (L.S.E.E) at university center Ali Kafi Tindouf Algeria, B. Azeddine, Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria, A. Helmaoui, Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar,Algeria

Journal of Ovonic Research· Volume 18· Issue 5

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Abstract

In this study, we use a Monte Carlo calculation code to simulate the concentration of electron-hole pairs generated of each point in the solid targets under a bombardment of Ni63 source for betavoltaic cells; this model is reported to be an accurate representation of electron interaction.From this simulation we can obtain the distribution of electron-hole pairs generated in GaN/GaN junction as a function of the depth, this distribution allowed us to find the concentrations of minority carriers excess depending on the thickness, which can represent as function and inject into the continuity equations for determine the diffusion current and then the characteristics of betavoltaic chosen. The model has been tested for Ni-63/GaN/GaN structure, with energy 17 KeV.

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OpenAlex topics: Advanced Energy Technologies and Civil Engineering Innovations · Advanced Materials and Semiconductor Technologies · Technology Assessment and Management

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References (8)

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1. [1] M. G. Spencer and T. Alam, Appl. Phys. Rev., vol. 6, no. 3, 2019; https://doi.org/10.1063/1.512316310.1063/1.5123163 ↗

2. [2] C. Munson et al., GaN-based , 63Ni betavoltaic battery To cite this version : Modeling , design , fabrication and experimentation of a GaN-based , 63 Ni betavoltaic battery, 2019.

3. [3] Z. Tiouti, B. Azeddine, and A. Helmaoui, "The concentration of electron-hole pairs generated by the interaction of electron with matter , case of cds using Monte Carlo simulation," vol. 17, no. 11, pp. 549-553, 2020.10.15251/CL.2020.1711.549 ↗

4. [4] B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids. Springer US, 1990; https://doi.org/10.1007/978-1-4757-9595-010.1007/978-1-4757-9595-0 ↗

5. [5] R. Galviy, A. Dominqi', and E. Drolin, A Formula to Compute Total Elastic Mott CrossSections," OFAMS, Inc, 1993.

6. [6] R. C. Alig and S. Bloom, Physical Review Letters Electron-Hole-Pair Creation Energies in Semiconductors.

7. [7] K. Kanaya, S. Ono, K. Kanayat, and S. Okayama, Penetration and energy-loss theory of electrons in solid targets The energy dependence of a diffusion model of an electron probe into solid targets Penetration and energy-loss theory of electrons in solid targets, 1972; https://doi.org/10.1088/0022-3727/5/1/30810.1088/0022-3727/5/1/308 ↗

8. [8] M. Wu and J. Zhang, AIP Adv., vol. 9, no. 7, 2019; https://doi.org/10.1063/1.509482610.1063/1.5094826 ↗