Structure of Bismuth Telluride Nanowire Arrays Fabricated by Electrodeposition into Porous Anodic Alumina Templates
Source abstract
Abstract
Arrays of bismuth telluride (Bi 2 Te 3 ) nanowires with diameters of ∼25, ∼50, and ∼75 nm have been produced by electrochemical deposition into porous anodic alumina templates. Scanning electron microscopy confirms that the nanowire arrays are dense with a narrow distribution of nanowire diameters. The structure of the nanowires was assessed immediately after deposition, after annealing to ∼80% of the melting point, and after melting/recrystallization. As determined by XRD analysis, there is strong fiber texture in the arrays that depends on both the nanowire diameter and the postdeposition processing conditions. Bright-field/dark-field imaging and diffraction in the transmission electron microscope reveal that the as-deposited nanowires are polycrystalline with a bamboo-type grain structure that does not change significantly upon annealing, and a similar grain structure is obtained after melting and resolidification.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Advanced Thermoelectric Materials and Devices · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry and Department of Materials Science & Engineering, University of California, Berkeley, California 94720
References (39)
Show source-provided references
1. Venkatasubramanian R. · Nature · 2001 · 413 · 59710.1038/35098012 ↗
2. Hicks L. D. · Phys. Rev. B · 1993 · 47 · 1663110.1103/PhysRevB.47.16631 ↗
3. Dresselhaus M. S. · Phys. Solid State · 1999 · 41 · 67910.1134/1.1130849 ↗
4. Dresselhaus M. S. · Microscale Thermophys. Eng. · 1999 · 3 · 8910.1080/108939599199774 ↗
5. Sapp S. A. · Adv. Mater. · 1999 · 11 · 40210.1002/(SICI)1521-4095(199903)11:5<402::AID-ADMA402>3.0.CO;2-L ↗
6. Huber T. E. · 1997
7. Huber C. · Adv. Mater. · 1995 · 7 · 31610.1002/adma.19950070316 ↗
8. Huber C. A. · Science · 1994 · 263 · 80010.1126/science.263.5148.800 ↗
9. Prieto A. L. · J. Am. Chem. Soc. · 2001 · 123 · 716010.1021/ja015989j ↗
10. Huczko A. · Appl. Phys. A · 2000 · 70 · 36510.1007/s003390051050 ↗
11. Martin C. R. · Chem. Mater. · 1996 · 8 · 173910.1021/cm960166s ↗
12. Martin C. R. · Science · 1994 · 266 · 196110.1126/science.266.5193.1961 ↗
13. Routkevitch D. · IEEE Trans. Electron Devices · 1996 · 43 · 164610.1109/16.536810 ↗
14. Ding Z. F. · Adv. Mater. · 2001 · 13 · 79710.1002/1521-4095(200106)13:11<797::AID-ADMA797>3.0.CO;2-U ↗
15. Cho S. L. · Appl. Phys. Lett. · 1999 · 75 · 140110.1063/1.124707 ↗
16. Boulouz A. · J. Cryst. Growth · 1998 · 194 · 33610.1016/S0022-0248(98)00690-3 ↗
17. Ferhat M. · J. Cryst. Growth · 1996 · 167 · 12210.1016/0022-0248(96)00247-3 ↗
18. Dauscher A. · Thin Solid Films · 1996 · 280 · 6110.1016/0040-6090(95)08221-2 ↗
19. Magri P. · J. Mater. Chem. · 1996 · 6 · 77310.1039/jm9960600773 ↗
20. Magri P. · 1994
21. Fleurial J. P. · 1997
22. Sander M. S. · Adv. Mater. · 2002 · 14 · 66510.1002/1521-4095(20020503)14:9<665::AID-ADMA665>3.0.CO;2-B ↗
23. Masuda H. · Science · 1995 · 268 · 146610.1126/science.268.5216.1466 ↗
24. Masuda H. · Appl. Phys. Lett. · 1997 · 71 · 277010.1063/1.120128 ↗
25. Asoh H. · J. Electrochem. Soc. · 2001 · 148 · B15210.1149/1.1355686 ↗
26. Asoh H. · J. Vac. Sci. Technol. B · 2001 · 19 · 56910.1116/1.1347039 ↗
27. Masuda H. · Adv. Mater. · 2001 · 13 · 18910.1002/1521-4095(200102)13:3<189::AID-ADMA189>3.0.CO;2-Z ↗
28. Jessensky O. · Appl. Phys. Lett. · 1998 · 72 · 117310.1063/1.121004 ↗
29. Li A. P. · J. Appl. Phys. · 1998 · 84 · 602310.1063/1.368911 ↗
30. Masuda H. · J. Electrochem. Soc. · 1997 · 144 · L12710.1149/1.1837634 ↗
31. Masuda H. · Jpn. J. Appl. Phys. · 1998 · 37 · L134010.1143/JJAP.37.L1340 ↗
32. Fleurial J. P. · 1999
33. Routkevitch D. · J. Phys. Chem. · 1996 · 100 · 1403710.1021/jp952910m ↗
34. Mullins W. W. · Acta Metallogr. · 1958 · 6 · 41410.1016/0001-6160(58)90020-8 ↗
35. Fayad W. R. · Phys. Rev. B · 2000 · 62 · 522110.1103/PhysRevB.62.5221 ↗
36. Li Y. · J. Phys. - Condens. Mater. · 2001 · 13 · 269110.1088/0953-8984/13/11/323 ↗
37. Xu D. S. · Adv. Mater. · 2000 · 12 · 52010.1002/(SICI)1521-4095(200004)12:7<520::AID-ADMA520>3.0.CO;2-# ↗
38. Molares M. E. T. · Adv. Mater. · 2001 · 13 · 6210.1002/1521-4095(200101)13:1<62::AID-ADMA62>3.0.CO;2-7 ↗
39. Yi G. · Appl. Phys. Lett. · 1999 · 74 · 174610.1063/1.123675 ↗