DataVXJournal of Ovonic ResearchPaper
journal article·2022-06Open access

Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs

School of Information Engineering, Huanghuai University, Zhumadian 463000, China, H. L. Hao, M. Y. Su, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, H. T. Wu, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, H. Y. Mei, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, R. X. Yao, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, F. Liu, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, H. Wen, School of Information Engineering, Huanghuai University, Zhumadian 463000, China, S. X. Sun, School of Information Engineering, Huanghuai University, Zhumadian 463000, China

Journal of Ovonic Research· Volume 18· Issue 3
Publisher pageOpen full text
Source abstract

Abstract

The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (19)

Show source-provided references
1. [1] J. Ajayan, D. Nirmal, R. Mathew, D. Kurian, P. Mohankumar, L. Arivazhagan, D. Ajitha, Materials Science in Semiconductor Processing, 128, 105753(2021); https://doi.org/10.1016/j.mssp.2021.10575310.1016/j.mssp.2021.105753 ↗
2. [2] Y. Chen, L. A. Yang, Z. Jin, Y. B. Su, Y. Hao, IEEE Transactions on Elecron Devices, 68(5), 2226(2021); https://doi.org/10.1109/TED.2021.306613910.1109/TED.2021.3066139 ↗
3. [3] S. X. Sun, Y. H. Zhong, H. Y. Mei, R. X. Yao, F. J. Chen, Y. X. Li, Y. F. Hu, Journal of Ovonic Research, 17(2), 137(2021).
4. [4] L. J. He, B. Y. Zhao, C. Y. He, Z. Y. Xie, J. S. Zhang, W. Z. Chen, Microelectronics Journal, 118, 105261(2021); https://doi.org/10.1016/j.mejo.2021.10526110.1016/j.mejo.2021.105261 ↗
5. [5] D. C.o Ruiz, D. Han, G. Bonomo, T. Saranovac, O. Ostinelli, C. R. Bolognesi, Physica Status Solidi A, 218(3), 2000191(2020); https://doi.org/10.1002/pssa.20200019110.1002/pssa.202000191 ↗
6. [6] J. N. Deng, J. H. Shao, J. Wan, B. R. Lu, Y. F. Chen, Microelectronic Engineering, 208, 54(2019); https://doi.org/10.1016/j.mee.2019.02.00410.1016/j.mee.2019.02.004 ↗
7. [7] S. X. Sun, X. L. Fu, L. Wang, M. E, J. J. Yi, R. X. Yao, X. Y. Zheng, H. T. Wu, F Liu, Y. H. Zhong, Y. X. Li, P. Ding, Z. Jin, Journal of Ovonic Research, 17(5), 411(2021)
8. [8] H. B. Jo, D. Y. Yun, J. M. Baek, J. H. Lee, T. W. Kim, D. H. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki, Applied Physics Express, 12(5), 054006(2019); https://doi.org/10.7567/1882-0786/ab194310.7567/1882-0786/ab1943 ↗
9. [9] H. B. Jo, J. M. Baek, D. Y. Yun, S. W. Son, J. H. Lee, T. W. Kim, D. H. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki, IEEE Electron Device Letters, 39(11), 1640(2018).
10. [10] J. Ajayan, D. Nirmal, P. Mohankumar, L. Arivazhagan, Silicon, 12, 1225(2020); https://doi.org/10.1007/s12633-019-00226-110.1007/s12633-019-00226-1 ↗
11. [11] J. N. Yao, Y. C. Lin, M. S. Lin, T. J. Huang, H. T. Hsu, S. M. Sze, E. Y. Chang, Solid State Electronics, 157, 55(2019); https://doi.org/10.1016/j.sse.2019.03.06010.1016/j.sse.2019.03.060 ↗
12. [12] P. Ding, C. Chen, Muhammad Asif, X. Wang, J. B. Niu, F. Yang, W. C. Ding, Y. B. SU, D. H. Wang, Z. Jin, IEEE Journal of the Electron Devices Society, 6, 49(2018); https://doi.org/10.1109/JEDS.2017.276534910.1109/JEDS.2017.2765349 ↗
13. [13] J. Ajayan, T. Ravichandran, P. Prajoon, J. Charles Pravin, D. Nirmal, Journal of Computational Electronics, 17, 265(2018); https://doi.org/10.1007/s10825-017-1086-410.1007/s10825-017-1086-4 ↗
14. [14] J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, D. Nirma, IETE Journal of ResearchVolume, 67(3), 366(2021).
15. [15] S. X. Sun, L. H. Ma, C. Cheng, C. Zhang, Y. H. Zhong, Y. X. Li, P. Ding, Z. Jin, Physica Status Solidi A, 214(10), 1700322(2017); https://doi.org/10.1002/pssa.20170032210.1002/pssa.201700322 ↗
16. [16] S. X. Sun, H. F. Ji, H. J. Yao, S. Li, Z. Jin, P. Ding, Y. H. Zhong, Chinese Physics B, 25(10), 108501(2016); https://doi.org/10.1088/1674-1056/25/10/10850110.1088/1674-1056/25/10/108501 ↗
17. [17] S. Tewari, A. Biswas, A. Mallik, IEEE Transactions on Elecron Devices, 63(6), 2313(2016); https://doi.org/10.1109/TED.2016.254851810.1109/TED.2016.2548518 ↗
18. [18] J. Ajayan and D. Nirma, Journal of Semiconductors, 38(4), 044001(2017); https://doi.org/10.1088/1674-4926/38/4/04400110.1088/1674-4926/38/4/044001 ↗
19. [19] J. Ajayan, T. D. Subash, D. Kurian, Superlattices and Microstructures, 109, 183(2017); https://doi.org/10.1016/j.spmi.2017.05.01510.1016/j.spmi.2017.05.015 ↗