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journal article·2022-09-09Open access

Effect of dopant of aluminum on the structural and optical properties of NiTsPc thin films

Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, H. K. Hassun, M. H. Mustafa, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, R. H. Athab, AI-Esraa University College, Baghdad, lraq, B. K. H. Al-Maiyaly, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, B. H. Hussein, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq

Journal of Ovonic Research· Volume 18· Issue 4
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Abstract

The (NiTsPc) thin films operating by vacuum evaporation technique are high recital and good desirable for number of applications, were dumped on glass substrates at room temperature with (200±20nm) thickness and doped with Al at different percentage (0.01,0.03) besides annealing the sample with 200˚C for 1 hours . The stimuluses of aluminum dopant percentage on characterization of the dropped (Ni Ts Pc) thin films were studied through X-ray diffraction in addition from the attained results, were all the films have polycrystalline in nature, as well the fallouts of XRD aimed at film illustrations polycrystalline, depending on the Al ratio doping, the results, SEM exposed the surface is regularly homogeneous. Utilizing first-ideologies calculations, we demonstration that appropriate band gaps and optical properties adjacent to that of direct energy gap intended for wholly samples.
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Research context

Ceramics & glassesMaterials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Phase-change materials and chalcogenides

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